Samsung showcases fast and efficient BV-NAND V10 storage, zHBM for AI accelerators‎

Samsung is showcasing a great variety of memory and storage technologies at its booth at the Future of Memory and Storage (FMS) 2026 event in Santa Clara, California. Thirteen years after it introduced the first V-NAND technology, Samsung is the first to unveil V10 of BV-NAND (Bonded V-NAND). This is a flash memory that has more than 400 layers and leverages Samsung’s advanced bonding technology to stack memory cells. V10 increases memory density by around 58% compared to the previous V9. The higher layer count gives V10 better read, write and I/O performance. It also improves power...